Question Text
Question 2 :
Bands in solids are formed due to a group of closely spaced ________ .
Question 4 :
The level formed due to impurity atom,in the forbidden energy gap,very near to the valence band in a p-type semiconductor is called<br/>
Question 5 :
<span>Which one is the weakest type of bonding in solids ?</span>
Question 6 :
Which one of the following statements is not correct in case of a semiconductor?
Question 8 :
In physics, chemistry, and electronic engineering, _______________ is the lack of an electron at a position where one could exist in an atom or atomic lattice.
Question 11 :
A hole is drilled in a copper sheet. The diameter of the hole is 4.24 cm at 27.0$^{\circ}$C. What is the change in the diameter of the hole when the sheet is heated to 227$^{\circ}$C? Coefficient of linear expansion of copper is 1.70 x 10$^{-5}$
Question 12 :
The forbidden gap for a pure silicon at the room temperature is _______eV.<br/>
Question 13 :
Each of the two inputs $A$ and $B$ can assume values either $0$ or $1$. Then which of the following will be equal to $\bar{A},\bar{B}$
Question 14 :
In the bandgap between valence band and conduction band in a material is $5.0eV$, then the material is
Question 16 :
Mobilities of electrons and holes in a sample of intrinsic germanium at room temperature are $0.36m^2V^{-1}s^{-1}$ and $0.17m^2V^{-1}s^{-1}$. The electron and hole densities are each equal to $2.5\times 10^{19}m^3$. The electrical conductivity of germanium is
Question 17 :
Three semiconductors are arranged in the increasing order of their energy gap as follows: the correct arrangement is