Question 2 :
The relation between the number of free electrons in semiconductors ( {tex} n \text { ) and its temperature ( } T ) {/tex} is

Question 3 :
The reverse biasing in a {tex} P N {/tex} junction diode

Question 4 :
When plate voltage in diode valve is increased from {tex}100 volt {/tex} to {tex}150 volt {/tex} then plate current increases from {tex} 7.5 \mathrm { mA } {/tex} to {tex} 12 \mathrm { mA } {/tex}. The dynamic plastic resistance will be

Question 9 :
An {tex} N{/tex}-type and {tex} P{/tex}-type silicon can be obtained by doping pure silicon with

Question 10 :
The charge on a hole is equal to the charge of

Question 12 :
The difference in the variation of resistance with temperature in a metal and a semiconductor arises essentially due to the difference in the

Question 14 :
If no external voltage is applied across {tex} P {/tex}-{tex}N{/tex}junction, there would be

Question 15 :
When the {tex} P {/tex} end of {tex} P-N {/tex} junction is connected to the negative terminal of the battery and the {tex} N {/tex} end to the positive terminal of the battery, then the {tex}P {/tex}-{tex}N{/tex}junction behaves like

Question 16 :
A semiconductor device is connected in a series circuit with a battery and a resistance. A current is found to pass through the circuit. If the polarity of the battery is reversed, the current drops almost to zero. The device may be

Question 17 :
The slope of plate characteristic of a vacuum tube diode for certain operating point on the curve is {tex} 10 ^ { - 3 } \frac { m A } { V } . {/tex} The plate resistance of the diode and its nature respectively

Question 18 :
In the following circuit the equivalent resistance between {tex} A {/tex} and {tex} B {/tex} is <br><img style='object-fit:contain' src="https://storage.googleapis.com/teachmint/question_assets/JEE%20Main/5dbd3fdee18860128132cc83">

Question 19 :
A diode is connected to {tex} 220\ { V } ({ rms } ) {/tex} ac in series with a capacitor as shown in figure. The voltage across the capacitor is <br><img style='object-fit:contain' src="https://storage.googleapis.com/teachmint/question_assets/JEE%20Main/5dbad0bb890ce41dfec55c66">

Question 20 :
In the grid circuit of a triode a signal {tex} E = 2 \sqrt { 2 } \cos \omega t {/tex} is applied. If {tex} \mu = 14 {/tex} and {tex} r = 10\ { k } \Omega {/tex} then root mean square current flowing through {tex} R _ { L } = 12\ { k\Omega } {/tex} will be

Question 21 :
In the following circuit find I₁ and I₂ -<br><img style='object-fit:contain' src='https://storage.googleapis.com/teachmint/question_assets/JEE%20Main/5e788a55135d6370e9dc1fbd' height='135' width='220' >

Question 23 :
{tex}\mathbf {Assertion}{/tex} : Silicon is preferred over germanium for making semiconductor devices.<br>{tex}\mathbf {Reason}{/tex} : The energy gap for germanium is more than the energy gap of silicon.

Question 24 :
The current through an ideal {tex}PN{/tex}-junctio frown in the following circuit diagram will be <br><img style='object-fit:contain' src="https://storage.googleapis.com/teachmint/question_assets/JEE%20Main/5dbac0fe890ce41dfec55b5e">

Question 25 :
The conductivity of a semiconductor increases with increase in temperature because

Question 26 :
A 2V battery is connected across the points A and B as shown in the figure given below. Assuming that the resistance of each diode is zero in forward bias and infinity in reverse bias, the current supplied by the battery when its positive terminal is connected to A is -<br><img style='object-fit:contain' src='https://storage.googleapis.com/teachmint/question_assets/JEE%20Main/5e788a3a8ad4296d0cdf8e30' height='111' width='156' >

Question 27 :
In space charge limited region, the plate current in a diode is {tex} 10\ { mA } {/tex} for plate voltage {tex} 150\ { V } . {/tex} If the plate voltage is increased to {tex} 600\ { V } {/tex}, then the plate current will be

Question 28 :
A zener diode is to be used as a voltage regulator. Identify the correct set up - <br><img style='object-fit:contain' src='https://storage.googleapis.com/teachmint/question_assets/JEE%20Main/5e788a53a6b42b703af290c8' height='206' width='257' >

Question 30 :
By increasing the temperature, the specific resistance of a conductor and a semiconductor

Question 31 :
In {tex} PN{/tex}-junction diode the reverse saturation current is {tex} 10 ^ { - 5 } {/tex} amp at {tex} 27 ^ { \circ } \mathrm { C } . {/tex} The forward current for a voltage of {tex}0.2\ volt{/tex} is {tex} \left[ \exp ( 7.62 ) = 2038.6 , K = 1.4 \times 10 ^ { - 23 } \mathrm { J } / \mathrm { K } \right] {/tex}

Question 32 :
The ratio of thermionic currents {tex}\left(i/i_{0}\right){/tex}for a metal when the temperature is slowly increased {tex}T_{0}{/tex} to {tex}T{/tex}as shown in figure. ({tex}i{/tex} and {tex}\left(i/i_{0}\right){/tex} are currents at {tex}T{/tex} and respectively). Then which one is correct? </br><img style='object-fit:contain' src="https://data-screenshots.sgp1.digitaloceanspaces.com/5dbd52f4eb22e866cc7a2d63.jpg" />

Question 33 :
In the circuit shown, the current through the ideal diode is -<br><img style='object-fit:contain' src='https://storage.googleapis.com/teachmint/question_assets/JEE%20Main/5e788a0fa6b42b703af29038' height='105' width='181' >

Question 34 :
In the diagram, the input is across the terminals {tex} A {/tex} and {tex} C {/tex} and the output is across the terminals {tex} B {/tex} and {tex} D {/tex}, then the output is <br><img style='object-fit:contain' src="https://storage.googleapis.com/teachmint/question_assets/JEE%20Main/5dbac0ef890ce41dfec55b59">

Question 35 :
A semiconductor {tex}X{/tex} is made by doping a germanium crystal with arsenic {tex} (Z = 33){/tex}. A second semiconductor {tex}Y{/tex} is made by doping germanium with indium {tex} (Z = 49){/tex}. The two are joined end to end and connected to a battery as shown. Which of the following statements is correct <img style='object-fit:contain' src="https://data-screenshots.sgp1.digitaloceanspaces.com/5dbd32a450b49266d2056441.jpg" />

Question 37 :
{tex}\mathbf {Assertion}{/tex} : Semiconductors do not Obey's Ohm's law.<br>{tex}\mathbf {Reason}{/tex} : Current is determined by the rate of flow of charge carriers.

Question 38 :
The probability of electrons to be found in the conduction band of an intrinsic semiconductor at a finite temperature

Question 39 :
In a full wave rectifier circuit operating from 50 Hz mains frequency, the fundamental frequency in the ripple would be

Question 40 :
{tex}\mathbf {Assertion}{/tex} : In the following circuit the potential drop across the resistance is zero.<br><img style='object-fit:contain' src="https://storage.googleapis.com/teachmint/question_assets/JEE%20Main/5dbd3a6cec8cf4127b930748"><br>{tex}\mathbf {Reason}{/tex} : The given resistance has low value.

Question 41 :
<font>In good conductors of electicity the type of bonding that exist is</font></p>

Question 43 :
<font>In Fig., the current supplied by the battery is -</font></p> <p> <img style='object-fit:contain' align="bottom" height="113" src="https://storage.googleapis.com/teachmint/question_assets/JEE%20Main/5fc0ed4da89a512aab2119f1" width="160"/> </p>

Question 44 :
<font>The probability of electorns to be found in the conduction band of an intrinsic semiconductor of finite temperature.</font></p>

Question 45 :
<font>A zener diode is specified as having a breakdown voltage of </font> <img style='object-fit:contain' align="bottom" height="18" src="https://storage.googleapis.com/teachmint/question_assets/JEE%20Main/5fc0f0cde6377b2e815f51eb" width="36"/> <font> with a maximum power dissipation of 364 mW. What is the maximum current the diodecan handle?</font></p>

Question 46 :
</font><font color="#000000"><font>If resistance of galvanometer is 100 </font></font><font color="#000000"><font face="Symbol, serif"><font></font></font></font><font color="#000000"><font> and deflection occurs in it when connected in circuit is of 20 divisions. Then calculate figure of merit of galvanometer - </font></font> </p> <p> <img style='object-fit:contain' align="bottom" height="112" src="https://storage.googleapis.com/teachmint/question_assets/JEE%20Main/5fc0f162a89a512aab21299a" width="129"/> </p> <p align="justify"> <font color="#000000">

Question 47 :
<font>In the circuit, if the forward voltage drop for the diode is 0.5V, the current will be -</font></p> <p> <img style='object-fit:contain' align="bottom" height="84" src="https://storage.googleapis.com/teachmint/question_assets/JEE%20Main/5fc0ed6ee6377b2e815f4407" width="168"/> </p>

Question 48 :
<font>A semiconductor is known to have an electron concentration of 8 × 10</font>^{<font>13</font>}<font> per cm</font>^{<font>3</font>}<font> and hole concentration of 5 × 10</font>^{<font>12</font>}<font>per cm</font>^{<font>3</font>}<font>. The semiconductor is -</font></p>