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Solids and, Semiconductors Devices, , , , 1, Tho given clectrical network is equivalent A, to (NET 2017] 8 [ey, , , , A y Ce, -—>—— >, (a)A=1.8=0C=0 (D)A=1821Ceg, j= pat ae (}> OR gate ()A=18=0C=1 (d)A=0B=1Ceg, (c) NOR gate NOT gate ; :, : se 5. Consider the junction diode as ideal. The, 2. In a common emitter transistor amplifier, value of current flowing through AB is, the audio signal voltage across the collector INEET 2016), is 3 V. The resistance of collector is 3 kQ, If A 1KQ B, current gain is 100 and the base resistance Sat own, is 2 kQ, the voltage and power gain of the, amplifier is INEET 2017] “a1o2A (b)10TA (c)109A (aoa, (a) 200 and 1000 (b) 15 and 200 ; ‘, (c} 150 and 15000 {d) 20 and 2000 6. An-p-n transistor is connected in common, , emitter configuration in a given amplifier,, 3. Which one of the following represents, , A load resistance of 800 © is connected in, forward bias diode? INEET 2017} the collector circuit and the voltage drop, ov R -2v across it is 0.8V. If the current, (a) b+ amplification factor is 0,96 and the input, R .3v resistance of the circuits is 192 Q, the, (0) petra SY voltage gain and the power gain of the, ty & R soy amplifier will respectively be — [NEET 2016], (8) 3.69, 3.84 (bo) 4,4, @) Vv QR 5y (c) 4, 3.69 (d) 4, 3.84, - 7, For CE transistor amplifier, the audio, 4, To get output 1 for the following circuit, signal voltage across the collector, the correct choice for the input is resistance of 2 kQ is 4 V. If the current, INEET 2016], , amplification factor of the transistor is

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igs and Semiconductors Devices, i, , st, , and the base resistance is 1k, th, input signal voltage is INCET 2016), mv (b) 20mV (c) 30mVv (a) 15 my, , at i, given circuit has two ideal diod, i Th ected as shown in the figure balove, on current flowing through the resistance, , | be, gem INET 2016}, a + 1 ,,, 10V, a., : 20, , ig 25A (0) 100A (0c) 143A (a) arg., , 1 What is the output Y in the followin,, 9. circuit, when all the three inate A c, gre first O and then 1? INEET 20161, , wn, ; [ee, 8 ° m, eee a, , ta) 0.1 (b) 0,0 (c) 1,0 (d) 1,4, , Jo. if in a p-n junction, a square input signal of, 40 V is applied as shown, [CBSE AIPMT 2015], , , , , , +54 6, , , , da, , , , 5V., then the output across R, will be, , 10V, (a) (b}, -10V), , 5v, sy j (0), , 11. Which logic gate is represented by the, , following combination of logic gates?, {CBSE AIPMT 2015}, , ¥, , , , , 4, %, , fgjOR (b)NAND (c)AND = () NOR, , 12, The input signal given 1, , 13. The given graph represents, , 317, , ace amplifier, , having a voltage pain of 150 is, , Vie 2ens( ina” } ‘Tho correspon, 3, , {CBSE Alps 20151, , an, , (15¢ +50, , ding, , output signal will be, (a) 900.08 (161 4 “| (b} 75008, , an, (e)2c00 (18¢ ‘ er) (d) goons (15! * 4), , 3, , Vel characteristic fora, somiconductor device., Which of the following, statoment is cornet?, (CBSE AIPMT 2014], {a) Itis Vf charactenstic for solar cell, represents Open cireuil yollage a!, short cireuil curtent, {b) Itis tor a sotar cel and points A and 8, represent opan earcuil voltage and current, ., respective, (un ar phalodiode and points A and B, fepresent open circuil vollage and current,, , respectivety, {d) IHis for a LEO and points Aand B represent, open circuit voltage and short circuit current, , respectively, , , , I where paint A, nd point B, , 14. The barrier potential of a p-" junction, , depends on {CBSE AIPMT 2014], , (i) type of semiconductor material, , (ii) amount of doping, , (iii) temperature, , Which one of the fallowing is correct?, (a) (i) and (ii) only {b) (i) only, , (c) (ii) and (iit) only {d) (i), (ii) and (iii), , 15. In a n-type semiconductor, which of the, , following statement is true? INEET 2013], , {a} Electrons are majority carriers and trivalent, atoms are dopants, , {b) Electrons are minority carners and pentavalent, atoms are dapants, , {c) Holes are minority carriers and pentavalent, atoms are dapants, , {d) Holes are majority carriers and trivalent atoms, are dopanls, , 16, In a common emitter (CE) amplifier having, , a voltage gain G, the transistor used has, transconductance 0.03 mho and current, gain 25. If the above transistor is replaced

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wav, , with another one with transconductance, , 0.02 mho and current gain 20, the voltage, gain will [NEET 2013], , 2 5, (a) ae 76, , 17. The output (X) of the logic circuit shown, in figure will be [NEET 2013), , | oo, , x, ll |, (a) X=A-B (b) X= AB, ()X=A-B (d)X=A+8, , 18, In a CE transistor amplifier, the audio, signal voltage across the collector, resistance of 2 kf is 2V. If the base, resistance is 1 kQ and the current, amplification of the transistor is 100, the, input signal voltage is [CBSE AIPMT 2012], (O1V ()10V (im d) 10 mv, , 19. C and Si both have same lattice structure,, having 4 bonding electrons in each., However, C is insulator whereas Si is, intrinsic semiconductor. This is because, , (CBSE AIPMT 2012], , (a) in case of C, the valence bond is not, completely filled at absolute zero temperature, , (b) in case of C, the conduction band is partly, filled even at absolute zero temperature, , {c) the four bonding electrons in the case of Clie, in the second orbit, whereas in the case of Si, they fie in the third, , (d) the four bonding electrons in the case of Clie, in the third orbit, whereas for Si they lie in the, fourth orbit, , (0) 156 iG, , , , , , , , 20. Transfer characteristic [output voltage (V,), vs input voltage (V;)] for a base biased, transistor in CE configuration is as shown, in the figure. For using transistor as a, switch, it is used, , 1 Wl il, , [CBSE AIPMT 2012], , , , Vj, , (b) both in region (1) and (lil), , (a) in region Ill, (d) in region |, , (c) In region Il, , re shows a logic circuit wi, ai. re and Band the output C, Tm", voltage wave forms across 4, Bandc is, given. The logic circuit gale is %, _ (CBSE AIPA 207, , , , , , , , , , , , , , , , , , , , , , , , , , c i te ty, , , , , , , , a) OR gate (0) NOR gate, 5 AND gate (gd) NAND gate, 22, Symbolic representation of four logic, are shown as [CBSE AIPA 2, , , , @ — Dp a], bees ee . —_, (iii) > (iv) [, , Pick oul which ones are for AND, NAND, and NOT gates, respectively., , (a) ci), (i) and (i) (0) (it), (ii) anc (iv), (c) @, (i) ana fii) (d) (i, (il) ana (iv), , 23. If a small amount of antimony is added to, germanium crystal (CBSE AIPMT 2011), (a) the antimony becomes an acceptor atom, (b) there will be more free electrons than heles n, the semiconductor, (c) its resistance is increased, (d) it becomes a p-type semiconductor, , 24, In forward biasing of the p-n junction, [CBSE AIPMT 2011), (a) the positive terminal of the battery is connected, : n-side and the depletion region becomes, thin, (b) the positive terminal of the battery is connectet, to n-side and the depletion region becomes, thick, (0) the positive terminal of the battery is connected, _ and the deplection region beoore, thi, (d) the positive terminal of the battery is connected, . p-side and the depletion region beoon®s, ick

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38. In the energy band diagram of a material, shown below, the open circles and filled, circles denote holes and electrons, , respectively, The material is a/an, ™ - {CBSE AIPMT 2007}, , , , Ec, , ey, , , , (a) ptype semiconductar (b) insulator, , {c) metal (0) mtype semiconductor, 59, In the following cireuit, the output Y for all, , possible inputs A and B is expressed by the, , , , truth table {CBSE AIPMT 2007], A, , { ¥, B 4, (lA BY (b)A BY, 000 001, o10 o11, 100 101, ae 110, WABY @MABY, oo14 000, 010 01.1, 100 101, 110 1a, , 40. The following figure shows a logic gate, circuit with two inputs A and B and the, output C. The voltage waveforms of A, B, and C are as shown below, , A—— Logic gate, , , , , , , , , , , , , , , , , , , , , , , , , , 8 circu [°°, 1, TIL..., 1, : ecla! occa! = Neceet ae, MW, LT., , , , ‘The logic circuit gate is [CBSE AIprgy 2, , (b) NAND gate, ID gate, ta Nor gale (d) OF gate, 41. A forward biased diode is ICBSE APT agg, -4V, (a) =v pt an, Vp nr —, (0) iz, c} ev, ! -y, , tor is operated in common emi,, a ania at constant collector yo] V. =15 V such that a change in the base, current from 100 HA to 150 HA produces 4, change in the collector current from 5 ma, , . The current gain (B) is, to10 mA [CBSE AIPMT 24, , {a) 67 (b) 75 {c) 100 {d) 50, , ‘i nsistor-oscillator using @ resonant, = aon with an inductor L (of negligible, resistance) and a capacitor C in series, produce oscillations of frequency f. If 1 ig, doubled and C is changed to 4 C, the, frequency will be [CBSE AIPMT 2096,, , f f f, as (0) 8f Ore a;, 44. Copper has face-centered cubic (fcc) lattice, with interatomic spacing equal to 2.54 4., The value of lattice constant for this lattice, is [CBSE AIPMT 2095], (ap1.274 (b)5.08A (254A (aaah, , 45. Choose only false statement from the, , following (CBSE AIPMT 2005}, , (a) Substances with energy gap of the order of, 10 eV are insulators, , (b) The conductivity of a semiconductor increases, with increases in temperature, , (c) In conductors the valence and conduction, bands may overlap, , (d) The fesistivity of a semiconductor increases, with increase in lemperature, , 46. Carbon, silicon and germanium atoms have, four valence electrons each. Their valence, and conduction bands are separated by, energy band gaps represented by