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1. The given electrical network is equivalent, , to [NEET 2017], —pD——DB, , (a) AND gate (}) OR gate, , (c) NOR gate (cd) NOT gate, , 2. In a common emitter transistor amplifier,, , the audio signal voltage across the collector, is 3 V. The resistance of collector is 3 kQ. If, current gain is 100 and the base resistance, is 2 kQ, the voltage and power gain of the, , amplifier is (NEET 2017], {a) 200 and 1000 (b) 15 and 200, (c) 150 and 15000 {d) 20 and 2000, , 3. Which one of the following represents, , ,, , forward bias diode? INEET 2017], , ta) Y— ppt 24, (b) AY R -3V, () 4p Rl +2Vv, (a) & ; R 5V, 4. To get output 1 for the following circuit,, , the correct choice for the input is, [NEET 2016], , aD, , , , Ceo——, ()A=18=0C=0 ()A=1.8=1C=0, (jA=1B=0C=1 (d)A=08=1C=0, , 5. Consfder the junction diode as ideal, The, value of current flowing through AB is, INEET 2016], , 1KQ 8, , 2} —s, +4V -6V, “(a1o2A (b)10'A (c)10°A (JOA, , 6. An-p-n transistor is connected in common, emitter configuration in a given amplifier., A load resistance of 800 Q is connected in, the collector circuit and the voltage drop, across it is 0.8V. If the current, amplification factor is 0.96 and the input, resistance of the circuits is 192 Q, the, voltage gain and the power gain of the, , amplifier will respectively be [NET 2016), (a) 3.69, 3.84 (b) 4,4, (c) 4, 3.69 (d) 4, 3.84, , 7. For CE transistor amplifier, the audio, signal voltage across the collector, resistance of 2 kQ is 4 V. If the current, amplification factor of the transistor is

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100 and the base resis, the input signal solisgic’ is 1 kQ, then, (a) 10 mV (b) 20mV (c) 39 = INEET 2076), , g, The given circuit has two (€) 18 my, , connected as shown in cane diodes, , The cones flowing through the eo, , A, will be sistance, 20 INEET 2016), , 10V, , , , , , , , , , (a) 25A (0) 100A (0) 143A (313A, , 9, What is the output Yin the following, , circuit, when all the three i, are first 0 and then 1? ee 16}, , As—, Q, - Y, , (a) 0.1 (b) 0,0 ©1,0 (11, , 10. If in a p-n junction, a square input signal of, 10 V is applied as shown, [CBSE AIPMT 2015}, , +5V — =, , A,, , , , , , , , , , , , -§V— —— 7 °, , then the output across R, will be, oo, , 10V, (a) (0), -10V, , (c) ay (a) ort., , 11, Which logic gate is represented by the, , cna tes?, following combination of a - PMT 2015!, , , , %, , B, , (a) OR, , oae, , 12, ine tapaat signal given to a CE amplifier, ‘aving a vollage gain of 150 is, , V, =2cos (ise + +} The corresponding, , outpul signal will be [CBSE AIPMT 2015], , (8) 300 cos | 4 z 2), os ( St+ *) (e) 7508 (15¢ + 3, (0)2 cos 181 + =) () 300 cos (154 + =), , 13, The given graph represents, V-I chiaracleristic for a, semiconductor device., Which of the following, statement is correct?, , {CBSE AIPMT 2014), , (a) It ts VI characteristic for solar cell where point A, represents open circuit vollage and point B, short circuil current, , (b) It is for a solar cell and points A and B, represent open circuit voltage and current,, respectively $, , {c) Itis for a photodiode and points A and B, represent! open circull voltage and current,, respectively, , (d) Itis for aLEO and points A and 8 represent, opan circuil voltage and short circuit current, , , , respectively, 14. The barrier potential of a p-n junction, depends on [CBSE AIPMT 2014], , (i) type of semiconductor material, , (ii) amount of doping, , (iii) temperature, , Which one of the following is correct?, (a) (i) and (il) only (0) (ii) only, , {c) (@ and (iil) only (d) (i), (i) and (iti), , 15. In a n-type semiconductor, which of the, , following statement is true? (NEET 2013}, , (a) Electrons ara majority carriers and trivalent, atoms are dopants, , (b) Electrons are minority carriers and pentavalent, atoms are dopants, , {c) Holes are minority carriers and pentavalent, atoms are dopants, , (d) Holes are majority carriers and trivalen! aloms, are dopants, , 16. In a common emitter (CE) amplifier having, a voltage gain G, the transistor, transconductance 0.03 mho and curreal, gain 25. If the above transistor Is repl

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with another one with transconductance, , 0.02 mho and current gain 20, the voltage, gain will, , , , , , , , INEET 2013}, 2 1 5, a)56 (b) 15G ,6 76, 47. The output (X) of the logic circuit shown, , in figure will be INEET 2013], , Ao, , x, , ot. >t )(a)X=A.B (0) X= AB, (c)X=A-8 ()X=A+8, , 18. In a CE transistor amplifier, the audio, signal voltage across the collector, resistance of 2 kQ is 2V. If the base, resistance is 1 kQ and the current, amplification of the transistor is 100, the, input signal voltage is {CBSE AIPMT 2012], (favO.1V (b) 1.0V (c)1mV (dd) 10 mv, , 419. C and Si both have same lattice structure,, having 4 bonding electrons in each,, However, C is insulator whereas Si is, intrinsic semiconductor, This is because, , [CBSE AIPMT 2012], (a) in case of C, the valence bond is not, completely filled at absolute zero temperature, (6) in case of C, the conduction band is Partly, filled even at absolute zero temperature, (c) the four bonding electrons in the case of C lie, in the second orbit, whereas in the case of Si, they lie in the third, (d) the four bonding electrons in the case of C lie, in the third orbit, whereas for Si they lie in the, fourth orbit, , ). Transfer characteristic [output voltage (V,), vs input voltage (V,)] for a base biased, transistor in CE configuration is as shown, , in the figure. For using transistor as a, switch, it is used, , ! i Ml, , [CBSE AIPMT 2012], , , , vy,, , (b) both in region (I) and (ill), (8) in region |, , (a) in region i, {c) in region II, , 21. Tho figure shows a logic clreult with two, inputs A and 8 and the output C. The, vollage wave forms across A.M and C ate ag |, given. The logle cirewil gate bs, (CDSE AME 2019), , , , , , , , , , , , , , , , , , , , , , , , , , Cc, , , , , , ty a ly 4, (a) OR gate (b) NOR gate, (c) AND gate (d) NAND gate, , 22. Symbolic representation of four logic gates, are shown as [CBSE AIPMT 2011], , w —)— wo) ST} ., (iii) TS (iv) —_| 4, , Pick out which ones are for AND, NAND, , and NOT gates, respectively., , (a) (ili), (ii) and (i) (b) (iit), (ii) and fiv), , (c) (ii), (iv) and (iii) (Gd) (ii), (iil) and (ev), 23. If a small amount of antimony is added to., , germanium crystal (CBSE AIPMT 201, , (a) the antimony becomes an acceptor atom, , , , , , , , , , (b) there will be more free electrons than holes in _, , the semiconductor 2, (c) its resistance is increased 2, (d) it becomes a p-type semiconductor, , 24. In forward biasing of the p-n junction :, [CBSE AIPMT 20, , (a) the positive terminal of the battery is ‘, , to.n-side and the depletion region becomes, , , , , , , , thin, , (b) the positive terminal of the battery is y, lo n-side and the depletion region becomes, thick a, , (c) the positive terminal of the battery is ', to p-side and the deplection region become», thin ‘, , (d) the positive terminal of the battery is connect ¢, 0 p-side and the depletion region becomes thick is

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25, Which one of th, false? 1c, (a) Pure Si doped with trivalent j ;, , ' fore Semiconductor eel, (b) Majority carriers in a, holes ® mYPe Semiconductor ara, , (c) Minority carriers in g P-type Semiconduct,, UCLOr are, , electrons, (d) The resistance Of intringi i, decreases with increase ota, 26. The device that can acta, electronic circuit is : tase ae, (a) Junction diode _, , (b) Integrated circuit, (c) Junction transistor, (d) Zener diode, , ICBSE AIPMT 2010, 2007], (a) 500 (b) 1000) 1250 (d) 50 ., , 28. To get an output Y =4 from the circuit, shown below, the input must be, (CBSE AIPMT 2010}, , —, , Ons, , ——_—_—_____], , , , A B, fad 1, (0 O, (c)1 0, (1 0 0, , 29. Sodium has body centred packing., Distance between two nearest atoms is 3.7, A. The lattice parameter is, , [CBSE AIPMT 2009, 1999}, , (68A (b)43A (0A (0d) BGA, , 30. A transistor is operated in common-emitter, configuration at V, = 2 voll such thal a, change in the base current from 100 pA to, 200 pA produces a change in the collector, current from 5 mA to 10 mA. The current, , =3007, , gain is {CBSE AIPMT 2009}, (a) 75 (b) 100, (c) 150 (d) 50, , 1. The symbolic representation of four logic, gates, , 319, , wa, «) —(—-—w —>—, tw) ——_) >—, , The logic symbols for OR, NOT and NAND, gales are respectively [CBSE AIPMT 2009}, (a) (ui), (rv), (ii) (b) (iv), (i). Gi), (c} tv), (il, (i) (GB) (i), (i), (rv), 32, A p-n photodiode is fabricated from a, , semiconductor with a band gap of 2.5 eV., It can detect a signal of wavelength, , [CBSE AIPMT 2009], (a) 6000 A (b) 4000 nm (c) 6000 nm (d) 4000 A, , 33. The circuit is equivalent to, , , , , , , , , , , , [CBSE AIPMT 2008}, NOR NAND NOT, {a) AND gate (b) NAND gate, {c) NOR gate (d) OR gate, , 34. A p-n photodiode is made of a material, with a band gap of 2.0 eV. The minimum, frequency of the radiation that can be, absorbed by the material is nearly, , [CBSE AIPMT 2008], (a) 10x 10" Hz (b) 5x 10" Hz, (c) 1x 10" Hz (d) 20 x 10"* Hz, , 35. The voltage gain of an amplifier with 9%, negative feedback is 10. The voltage gain, without feedback will be {CBSE AIPMT 2008), , (a) 90 (b) 10 (c) 1.25 {d) 100, , . If the lattice parameter for a crystalline, structure is 3.6 A, then the atomic radius, , in fcc crystals is [CBSE AIPMT 2008], (181A (by210A (292A (a) 127A, , For a cubic crystal structure which one of, the following relations indicating the cell, characteristic is correct ?. [CBSE AIPMT 2007], (ala%b ec anda #B and y+ 90°, O)atbecandasp =y=90", (Ja=b=candaefey=90"°, ()@=b=canda=p=y=0", , g

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38. In the energy band diagram of a material, shown below, the open circles and filled, circles denote holes and electrons, , tively. The material is a/an, — {CBSE AIPMT 2007}, , , , , , Ec, , , , Ey, , (a) ptype semiconductor (b) insulator, (c) metal (d) mtype semiconductor, , 39, In the following circuit, the output Y for all, possible inputs A and B is expressed by the, , , , , , , , , , truth table (CBSE AIPMT 2007], A, , Y, oe, (A BY WA BY, 000 001, 010 011, 100 1 Ov ii, 114 110, ()A BY @MABY, 001 ooo, 010 0 AA, 100 101, 170 174, , 40. The following figure shows a logic gate, circuit with two inputs A and B and the, output C. The voltage waveforms of A, B, and C are as shown below, , 2 @-—__, , 2 e—_, , , , Logic gate ec, circuit §, , , , , , , , , , , , , , , , , , The logic circuit gate is [CBSE AIPMT 2006), (a) AND gate (b) NAND gate, (c) NOR gate (d) OR gate, , 41. A forward biased diode is [CBSE AIPMT 2006}, , @ ~3v, o) & 5V, () pr 22, (d) Mg yy, , 42. A transistor is operated in common emitter, configuration at constant collector voltage, V, = 15 V such that a change in the base, current from 100 LA to 150 tA produces a, change in the collector current from 5 mA, , to 10 mA. The current gain (B) is, {CBSE AIPMT 2006}, , (a) 67 (b) 75 (c) 100 (dc) 50, , 43. A transistor-oscillator using a resonant, circuit with an inductor L (of negligible, resistance) and a capacitor C in series, produce oscillations of frequency f. If L is, doubled and C is changed to 4 C, the, , frequency will be [CBSE AIPMT 2006}, f f f, z f ies =, , (a) a (b) 8 (c) aE (9) 2, , 44. Copper has face-centered cubic (fcc) lattice, with interatomic spacing equal to 2.54 A., The value of lattice constant for this lattice, is {CBSE AIPMT 2005}, (a)1.27A (o)5.08A (c)254A (a) 359A, , 45. Choose only false statement from the, , following [CBSE AIPMT 2005], , (a) Substances with energy gap of the order of, 10 eV are insulators, , (b) The conductivity of a semiconductor increases, with increases in temperature, , (c) In conductors the valence and conduction, bands may overlap, , (d) The resistivity of a semiconductor increases, with increase in temperature, , 46. Carbon, silicon and germanium atoms have, four valence electrons each. Their valence, and conduction bands are separated by, energy band gaps represented by